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科研机构
半导体研究所 [13]
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期刊论文 [10]
会议论文 [3]
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2010 [4]
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2005 [1]
2002 [1]
2000 [2]
1999 [2]
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半导体物理 [13]
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Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
;
Ohno H (Ohno Hideo)
;
Xiong P (Xiong Peng)
;
von Molnar S (von Molnar Stephan)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Tuning of the two electron states in quantum rings through the spin-orbit interaction
期刊论文
physical review b, 2010, 卷号: 82, 期号: 4, 页码: art. no. 045312
Liu Y (Liu Y.)
;
Cheng F (Cheng F.)
;
Li XJ (Li X. J.)
;
Peeters FM (Peeters F. M.)
;
Chang K (Chang Kai)
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  |  
浏览/下载:71/4
  |  
提交时间:2010/08/17
GATE CONTROL
SPINTRONICS
RESONANCE
ENERGY
LAYERS
DOT
Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 41, 页码: 17569-17573
Meng XQ (Meng Xiuqing)
;
Tang LM (Tang Liming)
;
Li JB (Li Jingbo)
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  |  
浏览/下载:53/0
  |  
提交时间:2010/11/02
THIN-FILMS
QUANTUM DOTS
AB-INITIO
INDIUM
ZNO
SEMICONDUCTORS
ACTIVATION
OXIDATION
ELECTRON
ENERGY
Optical properties of UO2 and PuO2
期刊论文
journal of nuclear materials, 2010, 卷号: 400, 期号: 2, 页码: 151-156
Shi HL (Shi Hongliang)
;
Chu MF (Chu Mingfu)
;
Zhang P (Zhang Ping)
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  |  
浏览/下载:76/0
  |  
提交时间:2010/06/18
ELECTRONIC-STRUCTURE
URANIUM-DIOXIDE
POINT-DEFECTS
PHOTOEMISSION
ENERGY
APPROXIMATION
ENERGETICS
PLUTONIUM
CRYSTAL
SPECTRA
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
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  |  
浏览/下载:185/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films
期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 27, 期号: 1-2, 页码: 21-25
Chen CY
;
Chen WD
;
Song SF
;
Xu ZJ
;
Liao XB
;
Li GH
;
Bian LF
;
Ding K
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  |  
浏览/下载:23/0
  |  
提交时间:2010/03/17
Si clusters
Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 1, 页码: 111-114
Zhang SB
;
Kong GL
;
Xu YY
;
Wang YQ
;
Diao HW
;
Liao XB
收藏
  |  
浏览/下载:94/12
  |  
提交时间:2010/08/12
amorphous silicon
transient photoconductivity
light-induced change
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Lu LW
;
Zhang YH
;
Xu ZT
;
Xu ZY
;
Wang ZG
;
Wang J
;
Ge WK
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2010/11/15
Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)
期刊论文
journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3392-3395
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:47/0
  |  
提交时间:2010/08/12
1.3 MU-M
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
PHOTOLUMINESCENCE LINEWIDTH
EMISSION
LASERS
ENERGY
High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere
期刊论文
physical review b, 1999, 卷号: 59, 期号: 11, 页码: 7500-7506
Pajot B
;
Clerjaud B
;
Xu ZJ
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  |  
浏览/下载:53/0
  |  
提交时间:2010/08/12
ION-IMPLANTED SILICON
UNIAXIAL-STRESS
ABSORPTION
NITROGEN
DEFECT
GERMANIUM
COMPLEXES
OXYGEN
LEVEL
BANDS
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