Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films

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	Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films
	Zhang SB ; Kong GL ; Xu YY ; Wang YQ ; Diao HW ; Liao XB
刊名	acta physica sinica
	2002
卷号	51 期号:1 页码:111-114
关键词	amorphous silicon transient photoconductivity light-induced change
ISSN号	1000-3290
通讯作者	zhang sb,chinese acad sci,state lab surface phys,inst semicond,beijing 100083,peoples r china.
中文摘要	transient photoconductivity and its light-induced change were investigated by using a model 4400 boxcar averager and signal processor for lightly boron-doped a-si : h films. the transient photoconductivities of the sample were measured at an annealed state and light-soaked states. the transient decay process of the photoconductivity can be fitted fairly well by a second-order exponential decay function, which indicates that the decay process is related with two different traps. it is noteworthy that the photoconductivity of the film increases after light-soaking. this may be due to the deactivity of the boron acceptor b-4(-), and thus some of the boron atoms can no longer act as acceptors and drives e-f to shifts upward. consequently, the number of effective recombination centers may be reduced and so the photoconductivity increases.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12012]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang SB,Kong GL,Xu YY,et al. Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films[J]. acta physica sinica,2002,51(1):111-114.
APA	Zhang SB,Kong GL,Xu YY,Wang YQ,Diao HW,&Liao XB.(2002).Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films.acta physica sinica,51(1),111-114.
MLA	Zhang SB,et al."Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films".acta physica sinica 51.1(2002):111-114.