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Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704
Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
收藏  |  浏览/下载：25/0  |  提交时间：2014/03/26
Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor 期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 2, 页码: 022002
Yu, Zhou; Xinxing, Li; Renbing, Tan; Wei, Xue; Yongdan, Huang; Shitao, Lou; Baoshun, Zhang; Hua, Qin
收藏  |  浏览/下载：16/0  |  提交时间：2014/05/08
Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Ji, D; Liu, B; Lu, YW; Liu, GP; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/20
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Zhang, Renping; Yan, Wei; Wang, Xiaoliang; Yang, Fuhua
收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:  He JF;  Li MF
收藏  |  浏览/下载：40/1  |  提交时间：2011/07/05
Resonant subband Landau level coupling in symmetric quantum well 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.)
收藏  |  浏览/下载：29/0  |  提交时间：2010/12/05
STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS 期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 2, 页码: 87-
Yang W (Yang Wei); Luo HH (Luo Hai-Hui); Qian X (Qian Xuan); Ji Y (Ji Yang)
收藏  |  浏览/下载：77/0  |  提交时间：2010/05/24
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载：65/11  |  提交时间：2010/03/08

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