Molecular beam epitaxy growth of high electron mobility InAs AlSb deep | |
Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu | |
刊名 | journal of applied physics |
2013 | |
卷号 | 114期号:1页码:013704 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-26 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24573] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu. Molecular beam epitaxy growth of high electron mobility InAs AlSb deep[J]. journal of applied physics,2013,114(1):013704. |
APA | Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu.(2013).Molecular beam epitaxy growth of high electron mobility InAs AlSb deep.journal of applied physics,114(1),013704. |
MLA | Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu."Molecular beam epitaxy growth of high electron mobility InAs AlSb deep".journal of applied physics 114.1(2013):013704. |
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