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SPACE-CHARGE EFFECT IN UNINTENTIONALLY N-DOPED SILICON 期刊论文
modern physics letters b, 2012, 卷号: 26, 期号: 8, 页码: 1250048
Cong, KK; Ji, Y
收藏  |  浏览/下载:9/0  |  提交时间:2013/02/07
Electrode-contact enhancement in silicon nanowire-array-textured solar cells 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 14, 页码: article no.143108
Chen C; Jia R; Li HF; Meng YL; Liu XY; Ye TC; Kasai S; Tamotsu H; Wu NJ; Wang SL; Chu JH
收藏  |  浏览/下载:40/4  |  提交时间:2011/07/05
Thermoelectric properties of ZnO nanowires: A first principle research 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 30-31, 页码: 2878-2881
Liu CR; Li JB
收藏  |  浏览/下载:22/0  |  提交时间:2012/01/06
Au@Si-n: Growth behavior, stability and electronic structure 期刊论文
physics letters a, 2010, 卷号: 374, 期号: 27, 页码: 2736-2742
Wang J (Wang Jing); Liu Y (Liu Ying); Li YC (Li You-Cheng)
收藏  |  浏览/下载:22/0  |  提交时间:2010/07/18
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:  Li JB
收藏  |  浏览/下载:165/21  |  提交时间:2010/03/08
Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 5, 页码: art. no. 053107
作者:  Tan PH;  Liu J
收藏  |  浏览/下载:61/1  |  提交时间:2010/03/08
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载:64/1  |  提交时间:2010/03/08
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载:25/0  |  提交时间:2010/03/08
Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 14, 页码: art. no. 142109
作者:  Yin ZG;  Zhang XW
收藏  |  浏览/下载:23/0  |  提交时间:2010/03/08
The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 8, 页码: art. no. 084307
Xu, Q; Li, JB; Li, SS; Xia, JB
收藏  |  浏览/下载:75/1  |  提交时间:2010/03/08


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