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科研机构
半导体研究所 [24]
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期刊论文 [21]
会议论文 [3]
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2009 [2]
2007 [2]
2006 [1]
2005 [2]
2003 [2]
2002 [3]
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半导体物理 [24]
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学科主题:半导体物理
专题:半导体研究所
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Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:217/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:72/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Influence of deep level defects on electrical compensation in semi-insulating InP materials
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Yang, J (Yang Jun)
;
Zhao, YW (Zhao You-Wen)
;
Dong, ZY (Dong Zhi-Yuan)
;
Deng, AH (Deng Ai-Hong)
;
Miao, SS (Miao Shan-Shan)
;
Wang, B (Wang Bo)
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  |  
浏览/下载:32/0
  |  
提交时间:2010/03/29
InP
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen)
;
Miao, SS (Miao Shan-Shan)
;
Dong, ZY (Dong Zhi-Yuan)
;
Lue, XH (Lue Xiao-Hong)
;
Deng, AH (Deng Ai-Hong)
;
Yang, J (Yang Jun)
;
Wang, B (Wang Bo)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/29
indium phosphide
As-doped p-type ZnO films by sputtering and thermal diffusion process
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704
Wang P (Wang Peng)
;
Chen NF (Chen Nuofu)
;
Yin ZG (Yin Zhigang)
;
Yang F (Yang Fei)
;
Peng CT (Peng Changtao)
;
Dai RX (Dai Ruixuan)
;
Bai YM (Bai Yiming)
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
RAY-PHOTOELECTRON-SPECTROSCOPY
INAS SURFACES
FABRICATION
DEPOSITION
LAYERS
OXIDE
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
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  |  
浏览/下载:221/68
  |  
提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer
期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 2, 页码: 466-468
作者:
Niu Zhichuan
收藏
  |  
浏览/下载:100/2
  |  
提交时间:2010/11/23
Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film
期刊论文
chinese physics, 2003, 卷号: 12, 期号: 4, 页码: 438-442
Chen CY
;
Chen WD
;
Li GH
;
Song SF
;
Ding K
;
Xu ZJ
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/08/12
a-Si domain
erbium
photoluminescence
SI NANOCRYSTALS
LUMINESCENCE
ERBIUM
PHOTOLUMINESCENCE
EXCITATION
OXIDE
Effects of annealing ambient on the formation of compensation defects in InP
期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Deng AH
;
Mascher P
;
Zhao YW
;
Lin LY
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/08/12
UNDOPED SEMIINSULATING INP
LOW FE CONTENT
POSITRON-LIFETIME
PHASE EPITAXY
PRESSURE
VACANCY
INDIUM
ANNIHILATION
PHOSPHIDE
WAFERS
Fe-diffusion-induced defects in InP annealed in iron phosphide ambient
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931
Zhao YW
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Lin LY
收藏
  |  
浏览/下载:98/7
  |  
提交时间:2010/08/12
indium phosphide
annealing
semi-insulating
defect
diffusion
ENCAPSULATED CZOCHRALSKI INP
SEMIINSULATING INP
PHOTO-LUMINESCENCE
INDIUM-PHOSPHIDE
UNDOPED INP
PHOTOLUMINESCENCE
CRYSTALS
PRESSURE
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