Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

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	Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film
	Chen CY ; Chen WD ; Li GH ; Song SF ; Ding K ; Xu ZJ
刊名	chinese physics
	2003
卷号	12 期号:4 页码:438-442
关键词	a-Si domain erbium photoluminescence SI NANOCRYSTALS LUMINESCENCE ERBIUM PHOTOLUMINESCENCE EXCITATION OXIDE
ISSN号	1009-1963
通讯作者	chen cy,chinese acad sci,inst semicond,state lab surface phys,beijing 100083,peoples r china.
中文摘要	an investigation on the correlation between amorphous si (a-si) domains and er3+ emission in the er-doped hydrogenated amorphous silicon suboxide (a-si:o:h) film is presented. on one hand, a-si domains provide sufficient carriers for er3+ carrier-mediated excitation which has been proved to be the highest excitation path for er3+ ion; on the other hand, hydrogen diffusion from a-si domains to amorphous silicon oxide (a-siox) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around er3+ ions. this study provides a better understanding of the role of a-si domains on er3+ emission in a-si:o:h films.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11584]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen CY,Chen WD,Li GH,et al. Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film[J]. chinese physics,2003,12(4):438-442.
APA	Chen CY,Chen WD,Li GH,Song SF,Ding K,&Xu ZJ.(2003).Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film.chinese physics,12(4),438-442.
MLA	Chen CY,et al."Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film".chinese physics 12.4(2003):438-442.