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科研机构
半导体研究所 [23]
内容类型
期刊论文 [23]
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2011 [1]
2010 [2]
2009 [6]
2008 [2]
2006 [3]
2003 [2]
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半导体物理 [23]
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学科主题:半导体物理
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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 42, 页码: 425103
Lang, XL
;
Xia, JB
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浏览/下载:97/0
  |  
提交时间:2012/01/06
GASB SUPER-LATTICE
SEMICONDUCTOR HETEROSTRUCTURES
DEFORMATION POTENTIALS
II SUPERLATTICES
BAND PARAMETERS
DETECTORS
APPROXIMATION
TRANSITIONS
Mechanical and chemical bonding properties of ground state BeH2
期刊论文
european physical journal b, 2010, 卷号: 74, 期号: 3, 页码: 303-308
Wang BT
;
Zhang P
;
Shi HL
;
Sun B
;
Li WD
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浏览/下载:62/0
  |  
提交时间:2010/04/28
BERYLLIUM HYDRIDE
AB-INITIO
MGH2
First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms
期刊论文
physics letters a, 374 (8): 1054-1058 feb 8 2010, 2010, 卷号: 374, 期号: 8, 页码: 1054-1058
Kang J (Kang Jun)
;
Zhang Y (Zhang Yang)
;
Wen YH (Wen Yu-Hua)
;
Zheng JC (Zheng Jin-Cheng)
;
Zhu ZZ (Zhu Zi-Zhong)
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  |  
浏览/下载:27/0
  |  
提交时间:2010/04/21
First-principles calculations
ZnO nanofilms
Electronic properties
Quantum effects
NANOBELTS
NANORINGS
WURTZITE
ENERGY
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:71/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Lattice polarity detection of InN by circular photogalvanic effect
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902
Zhang Q
;
Wang XQ
;
He XW
;
Yin CM
;
Xu FJ
;
Shen B
;
Chen YH
;
Wang ZG
;
Ishitani Y
;
Yoshikawa A
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  |  
浏览/下载:68/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
nondestructive testing
photoconductivity
radiation effects
semiconductor thin films
wide band gap semiconductors
Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113108
作者:
Jia CH
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浏览/下载:107/4
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
FERROELECTRIC PROPERTIES
ELECTRICAL-PROPERTIES
STRUCTURAL-PROPERTIES
SUBSTRATE
The bipolar doping of ZnS via native defects and external dopants
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
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  |  
浏览/下载:132/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT
Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction
期刊论文
physics letters a, 2009, 卷号: 373, 期号: 23-24, 页码: 2091-2096
Liu GC
;
Wang ZG
;
Li SS
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  |  
浏览/下载:33/0
  |  
提交时间:2010/03/08
Graphene
Spin-Hall effect
Topology
The electronic structure of strained ZnO/MgxZn1-xO superlattices and the influence of polarization
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 3, 页码: 506-512
Xiong W
;
Li SS
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  |  
浏览/下载:167/41
  |  
提交时间:2010/03/08
ZnO
ZnO/MgxZn1-xO superlattice
Electronic structure
Polarization
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:218/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
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