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科研机构
半导体研究所 [10]
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会议论文 [10]
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2010 [1]
2006 [1]
2004 [2]
2001 [2]
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半导体物理 [10]
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学科主题:半导体物理
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Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
会议论文
international magnetics conference (intermag), madrid, spain, may 04-08, 2008
作者:
Gan HD
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2010/03/09
Magnetic analysis
A novel fast lock-in phase-locked loop frequency synthesizer with direct frequency presetting circuit
会议论文
international conference on solid state devices and materials (, kobe, japan, sep 13-15, 2005
Kuang, XF
;
Wu, NJ
;
Shou, GL
收藏
  |  
浏览/下载:167/14
  |  
提交时间:2010/03/29
lock-in speed
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Zhang YH
;
Jiang DS
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
GaAsSb/GaAs
GAAS
LASERS
GAIN
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
crystal morphology
quantum dots
molecular beam epitaxy
semiconducting gallium arsenide
semiconducting indium gallium arsenide
1.35 MU-M
GAAS-SURFACES
PHOTOLUMINESCENCE
ISLANDS
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Jiang DS
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
semiconducting IIIV materials
LUMINESCENCE
GAASN
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:
Han PD
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/10/29
AlGaN/GaN heterostructures
In-doping
2DEG
electron sheet density
X-ray diffraction
etching
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MOBILITY
GROWTH
FILMS
Optical transitions in GaNAs/GaAs single quantum well
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
Luo XD
;
Xu ZY
;
Sun BQ
;
Pan Z
;
Li LH
;
Lin YW
;
Ge WK
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
GaNAs
photoluminescence
band offset
band bowing coefficient
localized exciton
MOLECULAR-BEAM EPITAXY
ALLOYS
TEMPERATURE
GAASN
Visible vertical cavity surface emitting laser
会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Cheng P
;
Ma XY
;
Gao JH
;
Kang XJ
;
Cao Q
;
Wang HJ
;
Luo LP
;
Zhang CH
;
Lu XL
;
Lin SM
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
semiconductor lasers
oxidation
The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers
会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Huang YZ
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
vertical-cavity lasers
spontaneous emission factor
laser modes
AlAs oxidation
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