The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers

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	The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers
	Huang YZ
	1998
会议名称	semiconductor lasers iii
会议日期	sep 16-18, 1998
会议地点	beijing, peoples r china
关键词	vertical-cavity lasers spontaneous emission factor laser modes AlAs oxidation
页码	136-143
通讯作者	huang yz chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china.
中文摘要	the behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (vcsels). the results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the vcsels with sufficient thick double oxide layers. so the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized vcsels with double oxide layers. the results agree very well with the reported measurements and are inversely proportional to the lateral index step.
英文摘要	the behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (vcsels). the results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the vcsels with sufficient thick double oxide layers. so the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized vcsels with double oxide layers. the results agree very well with the reported measurements and are inversely proportional to the lateral index step.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:22z (gmt). no. of bitstreams: 1 3048.pdf: 359328 bytes, checksum: e3fcd9be41d1dd8c2b42e773572f3559 (md5) previous issue date: 1998; spie.; cos.; coema.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; cos.; coema.
会议录	semiconductor lasers iii, 3547
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	半导体物理
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3008-0
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13891]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Huang YZ. The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers[C]. 见:semiconductor lasers iii. beijing, peoples r china. sep 16-18, 1998.