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科研机构
半导体研究所 [41]
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期刊论文 [35]
会议论文 [6]
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2011 [6]
2010 [2]
2008 [2]
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2005 [3]
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半导体材料 [41]
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:
Xu B
;
Zhou GY
;
Ye XL
;
Zhang HY
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  |  
浏览/下载:55/5
  |  
提交时间:2011/07/05
SELF-ORGANIZED ISLANDS
MOLECULAR-BEAM-EPITAXY
OPTICAL-PROPERTIES
SURFACES
EMISSION
DENSITY
SIZE
High-power quantum dot superluminescent diode with integrated optical amplifier section
期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC
;
Jin, P
;
Lv, XQ
;
Li, XK
;
Wang, ZG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
SPECTRUM
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:65/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:
Jin P
;
Ye XL
;
Zhou XL
收藏
  |  
浏览/下载:53/4
  |  
提交时间:2011/07/05
SPECTROSCOPY
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:
Jin P
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  |  
浏览/下载:46/4
  |  
提交时间:2011/07/15
LIGHT-EMITTING-DIODES
OPTICAL-PROPERTIES
TUNING RANGE
NM
EMISSION
SPECTRUM
SPECTROSCOPY
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Jia CH (Jia C. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/12/12
DEPENDENCE
SPECTRA
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures
期刊论文
半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1453-1456
作者:
Wang Liang
;
Ning Jin
;
Zhao Yongmei
;
Liu Xingfang
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/23
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
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