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科研机构
半导体研究所 [8]
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期刊论文 [8]
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2011 [2]
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半导体材料 [8]
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Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/12/28
NARROW-GAP SEMICONDUCTOR
INVERSION-ASYMMETRY
QUANTUM DOTS
BAND
STATES
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX
;
Zhu QS
;
Xu B
;
Wang ZG
收藏
  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102
Gu YX (Gu Yong-Xian)
;
Yang T (Yang Tao)
;
Ji HM (Ji Hai-Ming)
;
Xu PF (Xu Peng-Fei)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:141/24
  |  
提交时间:2010/09/07
quantum dot
symmetrized Hamiltonian
Burt-Foreman Hamiltonian
finite element method
spurious solutions
EFFECTIVE-MASS APPROXIMATION
P THEORY
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
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  |  
浏览/下载:32/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y = Mg, Be)
期刊论文
computational materials science, 2008, 卷号: 44, 期号: 1, 页码: 72-78
Xu, Q
;
Zhang, XW
;
Fan, WJ
;
Li, SS
;
Xia, JB
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  |  
浏览/下载:45/0
  |  
提交时间:2010/03/08
Density functional theory
Electronic structure
Alloy
Doping
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
;
Guo SL (Guo S. L.)
;
Chu JH (Chu J. H.)
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  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
QUANTUM-WELL STRUCTURES
PHOTOLUMINESCENCE SPECTRA
HEMTS
Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well
期刊论文
journal of vacuum science & technology b, 2004, 卷号: 22, 期号: 6, 页码: 2568-2573
Li, JM
;
Lu, YW
;
Li, DB
;
Han, XX
;
Zhu, QS
;
Liu, XL
;
Wang, ZG
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  |  
浏览/下载:16/0
  |  
提交时间:2010/03/17
RAY PHOTOEMISSION SPECTROSCOPY
Self-consistent calculation of electronic states in asymmetric double barrier structure
期刊论文
materials science and engineering b-solid state materials for advanced technology, 1995, 卷号: 35, 期号: 0, 页码: 367-371
Song AM
;
Zheng HZ
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  |  
浏览/下载:17/0
  |  
提交时间:2010/11/17
electron states
RESONANT-TUNNELING STRUCTURE
SPACE-CHARGE BUILDUP
INTRINSIC BISTABILITY
PHONON-EMISSION
DEVICES
DIODE
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