Self-consistent calculation of electronic states in asymmetric double barrier structure

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	Self-consistent calculation of electronic states in asymmetric double barrier structure
	Song AM ; Zheng HZ
刊名	materials science and engineering b-solid state materials for advanced technology
	1995
卷号	35 期号:0 页码:367-371
关键词	electron states RESONANT-TUNNELING STRUCTURE SPACE-CHARGE BUILDUP INTRINSIC BISTABILITY PHONON-EMISSION DEVICES DIODE
ISSN号	0921-5107
通讯作者	song am chinese acad sciinst semicondnatl lab superlattices & microstructbeijing 100083peoples r china.
中文摘要	with contributions from both three-dimensional (3d) electrons in heavily doped contacts and 2d electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and that in the central well of an asymmetric double barrier structure (dbs). by choosing the thickness of the incident barrier properly, it is revealed that these two quasi-bound levels may merge into a unique bound level in the off-resonance regime which shows a very good 2d nature in contrast to the conventional picture for level crossing. an evident intrinsic i-v bistability is also shown. it is noticeable that the effect of charge build-up in the central well is so strong that the electric field in the incident barrier even decreases when the applied bias increases within the resonant region.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15463]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Song AM,Zheng HZ. Self-consistent calculation of electronic states in asymmetric double barrier structure[J]. materials science and engineering b-solid state materials for advanced technology,1995,35(0):367-371.
APA	Song AM,&Zheng HZ.(1995).Self-consistent calculation of electronic states in asymmetric double barrier structure.materials science and engineering b-solid state materials for advanced technology,35(0),367-371.
MLA	Song AM,et al."Self-consistent calculation of electronic states in asymmetric double barrier structure".materials science and engineering b-solid state materials for advanced technology 35.0(1995):367-371.