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半导体研究所 [283]
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期刊论文 [239]
会议论文 [44]
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2013 [5]
2011 [13]
2010 [19]
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半导体材料 [283]
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Strain-assisted structural transformation and band gap tuning in BeO, MgTe, CdS and 2H-SiC: A hybrid density functional study
期刊论文
epl, 2014, 卷号: 106, 期号: 5, 页码: 57001
Shi, LW
;
Qin, Y
;
Hu, J
;
Duan, YF
;
Qu, LC
;
Wu, L
;
Tang, G
收藏
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浏览/下载:25/0
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提交时间:2015/04/02
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width
期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
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浏览/下载:22/0
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提交时间:2014/03/18
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
期刊论文
nanoscale research letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Li MF(李密锋)
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浏览/下载:10/0
  |  
提交时间:2013/06/03
InAs quantum dots
Sacrificed InAs layer
Molecular beam epitaxy
Reflection high-energy electron
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates
期刊论文
applied surface science, 2013, 卷号: 270, 页码: 301-306
Dong, Lin
;
Sun, Guosheng
;
Yu, Jun
;
Zheng, Liu
;
Liu, Xingfang
;
Zhang, Feng
;
Yan, Guoguo
;
Li, Xiguang
;
Wang, Zhanguo
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  |  
浏览/下载:29/0
  |  
提交时间:2013/09/17
Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates
期刊论文
applied surface science, 2013, 卷号: 270, 页码: 301-306
Dong, Lin
;
Sun, Guosheng
;
Yu, Jun
;
Zheng, Liu
;
Liu, Xingfang
;
Zhang, Feng
;
Yan, Guoguo
;
Li, Xiguang
;
Wang, Zhanguo
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  |  
浏览/下载:17/0
  |  
提交时间:2014/03/17
Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method
期刊论文
chinese physics letters, 2013, 卷号: 30, 期号: 8, 页码: 087804
ZHANG Shi-Zhu, YE Xiao-Ling, XU Bo, LIU Shu-Man, ZHOU Wen-Fei, WANG Zhan-Guo
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浏览/下载:10/0
  |  
提交时间:2014/02/12
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104
Lu YJ (Lu Yuan-Jie)
;
Lin ZJ (Lin Zhao-Jun)
;
Yu YX (Yu Ying-Xia)
;
Meng LG (Meng Ling-Guo)
;
Cao ZF (Cao Zhi-Fang)
;
Luan CB (Luan Chong-Biao)
;
Wang ZG (Wang Zhan-Guo)
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浏览/下载:16/0
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提交时间:2013/04/02
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 16741056
Lü, Yuan-Jie
;
Lin, Zhao-Jun
;
Yu, Ying-Xia
;
Meng, Ling-Guo
;
Cao, Zhi-Fang
;
Luan, Chong-Biao
;
Wang, Zhan-Guo
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浏览/下载:18/0
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提交时间:2013/05/07
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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浏览/下载:69/3
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提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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浏览/下载:118/2
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提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
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