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CORC

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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06
Photoexcited charge current for the presence of pure spin current 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 26, 页码: art. no. 262108
Liu Y (Liu Yu); Chen YH (Chen Yonghai); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：221/46  |  提交时间：2010/09/07
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14
Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 18, 页码: art. no. 181904
Yin CM (Yin Chunming); Shen B (Shen Bo); Zhang Q (Zhang Qi); Xu FJ (Xu Fujun); Tang N (Tang Ning); Cen LB (Cen Longbin); Wang XQ (Wang Xinqiang); Chen YH (Chen Yonghai); Yu JL (Yu Jinling)
收藏  |  浏览/下载：30/0  |  提交时间：2010/12/05
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Geng, MM; Jia, LX; Zhang, L; Yang, L; Liu, YL; Li, F
收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09
Observation of photogalvanic current for interband absorption in InN films at room temperature 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Tang, CG; Chen, YH; Liu, Y; Zhang, RQ; Liu, XL; Wang, ZG; Zhang, R; Zhang, Z
收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09

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