Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator
	Geng, MM ; Jia, LX ; Zhang, L ; Yang, L ; Liu, YL ; Li, F
	2008
会议名称	2nd ieee international nanoelectronics conference
会议日期	mar 24-27, 2008
会议地点	shanghai, peoples r china
关键词	WAVE-GUIDES DEVICES DESIGN
页码	vols 1-3: 624-626
通讯作者	geng, mm, chinese acad sci, inst semicond, optoelect syst lab, pob 912, beijing 100083, peoples r china.
中文摘要	polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. the origin of the polarization-sensitivity of the photonic wire waveguide (pww) was analyzed. a polarization-insensitive pww structure was designed and a polarization-insensitive mrr based on this pww structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. the offset between the resonant wavelengths of the quasi-te mode and the quasi-tm mode is smaller than 0.15 nm. the fsr is about 17 nm, extinction ratio about 10 db and q about 620.
英文摘要	polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. the origin of the polarization-sensitivity of the photonic wire waveguide (pww) was analyzed. a polarization-insensitive pww structure was designed and a polarization-insensitive mrr based on this pww structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. the offset between the resonant wavelengths of the quasi-te mode and the quasi-tm mode is smaller than 0.15 nm. the fsr is about 17 nm, extinction ratio about 10 db and q about 620.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:51z (gmt). no. of bitstreams: 1 648.pdf: 622166 bytes, checksum: 91c6e63d18c027efa528fe5f2590384b (md5) previous issue date: 2008; ieee.; [geng, minming; jia, lianxi; zhang, lei; yang, lin; liu, yuliang] chinese acad sci, inst semicond, optoelect syst lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee.
会议录	2008 2nd ieee international nanoelectronics conference
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	978-1-4244-1572-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7752]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Geng, MM,Jia, LX,Zhang, L,et al. Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator[C]. 见:2nd ieee international nanoelectronics conference. shanghai, peoples r china. mar 24-27, 2008.