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科研机构
半导体研究所 [26]
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期刊论文 [25]
会议论文 [1]
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2011 [3]
2010 [3]
2009 [2]
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2006 [2]
2005 [2]
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半导体材料 [26]
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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:58/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
GaN grown with InGaN as a weakly bonded layer
期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:
Wei HY
;
Song HP
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  |  
浏览/下载:63/4
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SI(001) SUBSTRATE
STRAIN
EPITAXY
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
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  |  
浏览/下载:53/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW
;
Xu XQ
;
Wang J
;
Liu JM
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:67/8
  |  
提交时间:2011/07/05
IONIZED-IMPURITY-SCATTERING
COMPOSITIONAL INHOMOGENEITY
PHASE-SEPARATION
QUANTUM-WELLS
ALLOY
CATHODOLUMINESCENCE
HETEROSTRUCTURES
SEMICONDUCTORS
TRANSPORT
MOBILITY
Electrical bistability and negative differential resistance in diodes based on silver nanoparticle-poly(N-vinylcarbazole) composites
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 9, 页码: art. no. 094320
Tang AW (Tang Aiwei)
;
Qu SC (Qu Shengchun)
;
Hou YB (Hou Yanbing)
;
Teng F (Teng Feng)
;
Tan HR (Tan Hairen)
;
Liu J (Liu Jie)
;
Zhang XW (Zhang Xingwang)
;
Wang YS (Wang Yongsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/12/12
THIN-FILM
OPTICAL-PROPERTIES
RAMAN-SCATTERING
MEMORY DEVICES
NANOPARTICLES
NANOCRYSTALS
MOLECULE
CLUSTERS
IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES
期刊论文
international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450
作者:
Hao GD
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  |  
浏览/下载:49/5
  |  
提交时间:2011/07/05
Strain effect
optical anisotropy
A-plane
R-plane
CONTINUOUS-WAVE OPERATION
LIGHT-EMITTING-DIODES
LASER-DIODES
POLARIZATION ANISOTROPY
QUANTUM-WELLS
SEMICONDUCTORS
Growth behavior of AlInGaN films
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
收藏
  |  
浏览/下载:217/66
  |  
提交时间:2010/03/08
Scanning electron microscope
Strain
X-ray diffraction
AlInGaN
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:311/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG
;
Liu, XL
;
Jiao, CM
;
Wei, HY
;
Kang, TT
;
Zhang, PF
;
Zhang, RQ
;
Fan, HB
;
Zhu, QS
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  |  
浏览/下载:57/4
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
WURTZITE-TYPE CRYSTALS
THIN-FILMS
ALUMINUM NITRIDE
INTRINSIC STRESS
GAN
SAPPHIRE
AIN
DEPOSITION
STRAIN
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
high electron mobility transistor
self-consistent calculation
InAlAs/InGaAs heterostructure
CHARGE CONTROL MODEL
ELECTRON-MOBILITY TRANSISTORS
PSEUDOMORPHIC INGAAS HEMT
FIELD-EFFECT TRANSISTOR
QUANTUM-WELL
ALGAAS/INGAAS PHEMTS
GATE RECESS
HIGH-SPEED
HETEROJUNCTION
CHANNEL
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