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QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders 期刊论文
ultramicroscopy, 2008, 卷号: 108, 期号: 12, 页码: 1540-1545
Zhao HS; Wu DQ; Yao JC; Chang AM
收藏  |  浏览/下载:47/0  |  提交时间:2010/03/08
Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者:  Wei TB;  Duan RF
收藏  |  浏览/下载:34/0  |  提交时间:2010/03/29
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling 期刊论文
applied physics letters, 2004, 卷号: 85, 期号: 23, 页码: 5562-5564
Lu, Y; Cong, GW; Liu, XL; Lu, DC; Wang, ZG; Wu, MF
收藏  |  浏览/下载:21/0  |  提交时间:2010/03/17
STRESS  
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:  Zhao DG
收藏  |  浏览/下载:69/0  |  提交时间:2010/08/12
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载:63/0  |  提交时间:2010/08/12
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM; Zeng YP; Zhou HW; Kong MY
收藏  |  浏览/下载:53/0  |  提交时间:2010/08/12
A theoretical model for the tilt of the GaAs/Si epilayers 期刊论文
journal of crystal growth, 1997, 卷号: 178, 期号: 3, 页码: 276-279
Hao MS; Shao CL; Soga T; Jimbo T; Umeno M; Liang JW
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/17


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