Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE

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	Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE
	Wei TB; Duan RF
刊名	journal of physics d-applied physics
	2007
卷号	40 期号:9 页码:2881-2885
关键词	VAPOR-PHASE EPITAXY
ISSN号	issn: 0022-3727
通讯作者	wei, tb, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	a 275 mu m thick gan layer was directly grown on the sio2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (hvpe) reactor. the variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-raman spectroscopy in a cross section of the thick film. the d x-0(a) line with the fwhm of 5.1 mev and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick gan epitaxial layer. optically active regions appeared above the sio2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. the crystalline quality was improved by increasing the thickness of the gan/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. the x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (elo) gan.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9508]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei TB,Duan RF. Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE[J]. journal of physics d-applied physics,2007,40(9):2881-2885.
APA	Wei TB,&Duan RF.(2007).Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE.journal of physics d-applied physics,40(9),2881-2885.
MLA	Wei TB,et al."Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE".journal of physics d-applied physics 40.9(2007):2881-2885.