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科研机构
半导体研究所 [15]
内容类型
期刊论文 [14]
会议论文 [1]
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2011 [2]
2010 [3]
2009 [2]
2008 [4]
2003 [1]
2002 [1]
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半导体材料 [15]
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Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
收藏
  |  
浏览/下载:39/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
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  |  
浏览/下载:98/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:147/21
  |  
提交时间:2010/08/17
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
Conduction band offset
Valence band offset
NEGATIVE ELECTRON-AFFINITY
INDIUM NITRIDE
WURTZITE GAN
SURFACE
FILM
ALN
TRANSPORT
EMISSION
NAXWO3
GROWTH
Optical properties and electrical bistability of CdS nanoparticles synthesized in dodecanethiol
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 16, 页码: art. no. 163112
Tang AW (Tang Aiwei)
;
Teng F (Teng Feng)
;
Hou YB (Hou Yanbing)
;
Wang YS (Wang Yongsheng)
;
Tan FR (Tan Furui)
;
Qu SC (Qu Shengchun)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:211/32
  |  
提交时间:2010/05/07
LIGHT-EMITTING-DIODES
QUANTUM DOTS
NANOCRYSTALS
POLYMER
DEVICES
THERMOLYSIS
ASSEMBLIES
Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
applied surface science, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330
Zheng GL (Zheng Gaolin)
;
Wang J (Wang Jun)
;
Liu XL (Liu Xianglin)
;
Yang AL (Yang Anli)
;
Song HP (Song Huaping)
;
Guo Y (Guo Yan)
;
Wei HY (Wei Hongyuan)
;
Jiao CM (Jiao Chunmei)
;
Yang SY (Yang Shaoyan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:168/22
  |  
提交时间:2010/08/17
MgO
Rutile
Band offset
X-ray photoelectron spectroscopy
Gate dielectric
Dye-sensitized solar cells
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:313/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 4, 页码: art. no. 042906
Zhang, PF
;
Liu, XL
;
Zhang, RQ
;
Fan, HB
;
Song, HP
;
Wei, HY
;
Jiao, CM
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:41/2
  |  
提交时间:2010/03/08
INN
ALN
GAN
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:234/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
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  |  
浏览/下载:106/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
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