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Highly nonlinear property and threshold voltage of Sc2O3 doped ZnO-Bi2O3-based varistor ceramics 期刊论文
journal of rare earths, 2013, 卷号: 31, 期号: 2, 页码: 158-163
Xu Dong; Wu Jieting; Jiao Lei; Xu Hongxing; Zhang Peimei; Yu Renhong; Cheng Xiaonong
收藏  |  浏览/下载:11/0  |  提交时间:2013/09/22
Microstructure and electrical properties of Y(NO3)3·6H2O-doped ZnO-Bi2O3-based varistor ceramics 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 38, 页码: 9312-9317
Xu, Dong; Cheng, Xiaonong; Yuan, Hongming; Yang, Juan; Lin, Yuanhua
收藏  |  浏览/下载:46/0  |  提交时间:2012/06/14
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP
收藏  |  浏览/下载:222/40  |  提交时间:2010/03/29
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX
收藏  |  浏览/下载:202/19  |  提交时间:2010/03/29
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Growth of ZnO single crystal by chemical vapor transport method 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhou, JM; Dong, ZY; Wei, XC; Duan, ML; Li, JM
收藏  |  浏览/下载:564/45  |  提交时间:2010/03/29
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM
收藏  |  浏览/下载:202/36  |  提交时间:2010/03/29
MOCVD  
Growth of ZnO single crystal by chemical vapor transport method 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40275
作者:  Wei XC
收藏  |  浏览/下载:59/0  |  提交时间:2010/04/11
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40495
Liu Z; Wang JX; Wang XL; Hu GX; Guo LC; Liu HX; Li JP; Li JM; Zeng YP
收藏  |  浏览/下载:44/0  |  提交时间:2010/04/11
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX
收藏  |  浏览/下载:38/0  |  提交时间:2010/04/11


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