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CORC

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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 7, 页码: 1719-1723
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH
收藏  |  浏览/下载：83/1  |  提交时间：2010/03/08
Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 11, 页码: art. no. 115106
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH
收藏  |  浏览/下载：65/1  |  提交时间：2010/03/08
Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF
收藏  |  浏览/下载：23/0  |  提交时间：2010/08/12
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：294/3  |  提交时间：2010/08/12
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:  Li CM;  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW
收藏  |  浏览/下载：126/0  |  提交时间：2010/08/12
MOCVD growth of cubic GaN: Materials and devices 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Zhao DG;  Zhang SM
收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29
Rapid thermal annealing processing of GaN epilayer on sapphire(0 0 0 1) 期刊论文
journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 298-301
Li XB; Sun DZ; Kong MY; Yoon SF
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12

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