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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202 作者:  Jin P 收藏  |  浏览/下载：45/4  |  提交时间：2011/07/15 LIGHT-EMITTING-DIODES  OPTICAL-PROPERTIES  TUNING RANGE  NM  EMISSION  SPECTRUM  SPECTROSCOPY   Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885 作者:  Wei TB;  Duan RF 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29 VAPOR-PHASE EPITAXY   Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer 期刊论文 applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428 作者:  Duan RF;  Wei TB 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 GaN   Terahertz pulse generation with LT-GaAs photoconductive antenna 会议论文 joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics, shanghai, peoples r china, sep 18-22, 2006 Cui, LJ (Cui, L. J.); Zeng, YP (Zeng, Y. P.); Zhao, GZ (Zhao, G. Z.) 收藏  |  浏览/下载：160/48  |  提交时间：2010/03/29 TEMPERATURE-GROWN GAAS  CARRIER DYNAMICS  EMISSION   Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates 期刊论文 journal of electronic materials, 1999, 卷号: 28, 期号: 1, 页码: 1-5 Niu ZC; Notzel R; Jahn U; Schonherr HP; Fricke J; Ploog KH 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 high-index substrates  molecular beam epitaxy (MBE)  patterned growth  three-dimensionally confined nanostructures  SIDEWALL QUANTUM WIRES  GAAS  PHOTOLUMINESCENCE  DOTS  MOLECULAR-BEAM EPITAXY