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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载:19/0  |  提交时间:2012/02/06
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载:45/4  |  提交时间:2011/07/15
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载:52/0  |  提交时间:2010/03/09
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth 期刊论文
electronics letters, 2005, 卷号: 41, 期号: 25, 页码: 1400-1402
作者:  Jin P
收藏  |  浏览/下载:52/0  |  提交时间:2010/04/11


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