CORC

在结果中检索

CORC

浏览/检索结果: 共26条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Widely Tunable Optical Decision Circuit Using a Monolithically Integrated SOA-SGDBR Laser 期刊论文
ieee photonics technology letters, 2014, 卷号: 26, 期号: 7, 页码: 722-725
Yu, LQ; Lu, D; Pan, BW; Zhao, LJ
收藏  |  浏览/下载：14/0  |  提交时间：2015/04/02
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yan, JC; Wang, JX; Liu, Z; Liu, NX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09
DIODES  
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Xu B;  Jin P
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09
INAS  
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Zhao, YM; Ning, J; Sun, GS; Liu, XF; Wang, L; Ji, G; Wang, L; Zhao, WS; Li, JM; Yang, FH
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09
Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Hao, HY; Zhang, SB; Xu, YY; Zeng, XB; Diao, HW; Kong, GL; Liao, XB
收藏  |  浏览/下载：214/78  |  提交时间：2010/03/29
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:  Zhang SM;  Zhao DG
收藏  |  浏览/下载：84/5  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace