CORC

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CORC

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Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo)
收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin)
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1205-1210
Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Junxi; Wang Lei; Zhao Wanshun; Wang Xiaoliang; Zeng Yiping; Li Jinmin
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1549-1554
Sun Guosheng; Gao Xin; Zhang Yongxing; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23
Structural phase transformations of ZnS nanocrystalline under high pressure 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 1, 页码: 67-69
Pan YW; Qu SC; Gao CX; Han YH; Luo JF; Cui QL; Liu J; Zou GT
收藏  |  浏览/下载：40/21  |  提交时间：2010/03/09
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：149/5  |  提交时间：2010/08/12
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117
Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12

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