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Intersubband Transition in GaN/InGaN Multiple Quantum Wells 期刊论文
scientific reports, 2015, 卷号: 5, 页码: 11485
G. Chen; X.Q. Wang; X. Rong; P. Wang; F.J. Xu; N. Tang; Z.X. Qin; Y.H. Chen; B. Shen
收藏  |  浏览/下载：20/0  |  提交时间：2016/03/22
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:  Hou QF;  Yin HB
收藏  |  浏览/下载：45/6  |  提交时间：2011/07/05
Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Ji, Panfeng; Liu, Naixin; Wei, Xuecheng; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin
收藏  |  浏览/下载：18/0  |  提交时间：2012/06/14
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands 期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071
作者:  Wei TB
收藏  |  浏览/下载：44/4  |  提交时间：2011/07/05
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:  Wei XC;  Duan RF;  Ding K
收藏  |  浏览/下载：80/19  |  提交时间：2010/03/08
Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH
收藏  |  浏览/下载：58/4  |  提交时间：2010/03/08
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402
Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping)
收藏  |  浏览/下载：123/0  |  提交时间：2010/03/29
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659
Gao HY (Gao Haiyong); Yan FW (Yan Fawang); Li JM (Li Jinmin); Zeng YP (Zeng Yiping); Wang JX (Wang Junxi)
收藏  |  浏览/下载：81/0  |  提交时间：2010/03/29
Effect of the ratio of TMIn flow to group III flow on the properties of InGaN/GaN multiple quantum wells 期刊论文
acta physica sinica, 2004, 卷号: 53, 期号: 8, 页码: 2467-2471
Zhang, JC; Wang, JF; Wang, YT; Hui, Y
收藏  |  浏览/下载：141/36  |  提交时间：2010/03/09
Void formation and failure in InGaN/AlGaN double heterostructures 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412
作者:  Han PD
收藏  |  浏览/下载：207/2  |  提交时间：2010/08/12

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