Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中科院半导体照明研发中心

	Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
	Wei TB
刊名	optics express
	2011
卷号	19 期号:2 页码:1065-1071
关键词	OUTPUT ENHANCEMENT
ISSN号	1094-4087
通讯作者	wei, tb, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. tbwei@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural sciences foundation of china [60806001, 50972144]; national high technology program of china [2009aa03a198]; chinese academy of sciences [iscas2008t03]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	ingan-based light emitting diodes (leds) with a top nano-roughened p-gan surface are fabricated using self-assembled cscl nano-islands as etch masks. following formation of hemispherical gan nano-island arrays, electroluminescence (el) spectra of roughened leds display an obvious redshift due to partial compression release in quantum wells through inductively coupled plasma (icp) etching. at a 350-ma current, the enhancement of light output power of leds subjected to icp treatment with durations of 50, 150 and 250 sec compared with conventional led have been determined to be 9.2, 70.6, and 42.3%, respectively. additionally, the extraction enhancement factor can be further improved by increasing the size of cscl nano-island. the economic and rapid method puts forward great potential for high performance lighting devices. (c) 2011 optical society of america
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21049]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Wei TB. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands[J]. optics express,2011,19(2):1065-1071.
APA	Wei TB.(2011).Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.optics express,19(2),1065-1071.
MLA	Wei TB."Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands".optics express 19.2(2011):1065-1071.