CORC

在结果中检索

CORC

浏览/检索结果: 共34条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05
Residual impurities and electrical properties of undoped LEC InAs single crystals 期刊论文
半导体学报, 2010, 卷号: 31, 期号: 4, 页码: 042001-1-042001-4
Hu Weijie; Zhao Youwen; Sun Wenrong; Duan Manlong; Dong Zhiyuan; Yang Jun
收藏  |  浏览/下载：10/0  |  提交时间：2011/08/16
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：237/104  |  提交时间：2010/03/08
Wet etching and infrared absorption of AlN bulk single crystals 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 7, 页码: 27-30
作者:  Ke Jianhong
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08
Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 3, 页码: 822-824
Wei TB (Wei Tong-Bo); Ma P (Ma Ping); Duan RF (Duan Rui-Fei); Wang JX (Wang Jun-Xi); Li JM (Li Jin-Min); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
Structural and Optical Performance of GaN Thick Film Grown by HVPE 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 1, 页码: 19-23
作者:  Duan Ruifei;  Liu Zhe;  Duan Ruifei;  Wei Tongbo
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.); Li CJ (Li C. J.)
收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载：167/71  |  提交时间：2010/03/29
ALN  IMPURITIES  DONOR  

©版权所有 ©2017 CSpace - Powered by CSpace