Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE

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	Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE
	Wei TB (Wei Tong-Bo) ; Ma P (Ma Ping) ; Duan RF (Duan Rui-Fei) ; Wang JX (Wang Jun-Xi) ; Li JM (Li Jin-Min) ; Zeng YP (Zeng Yi-Ping)
刊名	chinese physics letters
	2007
卷号	24 期号:3 页码:822-824
关键词	VAPOR-PHASE EPITAXY
ISSN号	issn: 0256-307x
通讯作者	wei, tb, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: tbwei@semi.ac.cn
中文摘要	thick gan films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (hvpe) reactor. the optical and structural properties of large scale columnar do-mains near the interface are studied using cathodoluminescence and micro-raman scattering. these columnar do-mains show a strong emission intensity due to extremely high free carrier concentration up to 2 x 10(19) cm(-3), which are related with impurities trapped in structural defects. the compressive stress in gan elm clearly decreases with increasing distance from interface. the quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9626]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wei TB ,Ma P ,Duan RF ,et al. Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE[J]. chinese physics letters,2007,24(3):822-824.
APA	Wei TB ,Ma P ,Duan RF ,Wang JX ,Li JM ,&Zeng YP .(2007).Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE.chinese physics letters,24(3),822-824.
MLA	Wei TB ,et al."Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE".chinese physics letters 24.3(2007):822-824.