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科研机构
半导体研究所 [20]
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期刊论文 [19]
会议论文 [1]
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2013 [1]
2010 [1]
2009 [6]
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半导体材料 [20]
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19μm quantum cascade infrared photodetectors
期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 191120 - 191120-4
作者:
Zhai, Shen-Qiang
;
Liu, Jun-Qi
;
Wang, Xue-Jiao
;
Zhuo, Ning
;
Liu, Feng-Qi
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  |  
浏览/下载:22/0
  |  
提交时间:2014/02/12
Aluminium Compounds
Gallium Compounds
Iii-v Semiconductors
Indium Compounds
Infrared Detectors
Leakage Currents
Photodetectors
Photodetectors
Bolometers
Infrared Submillimeter Wave microWave And radioWave Receivers And Detectors
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
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  |  
浏览/下载:221/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901
作者:
Wei HY
;
Song HP
;
Jiao CM
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  |  
浏览/下载:379/108
  |  
提交时间:2010/03/08
aluminium compounds
core levels
III-V semiconductors
magnesium compounds
semiconductor heterojunctions
semiconductor-insulator boundaries
X-ray photoelectron spectra
Depolarization blueshift in intersubband transitions of triangular quantum wires
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:
Song HP
;
Zhang B
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  |  
浏览/下载:31/0
  |  
提交时间:2010/04/04
aluminium compounds
effective mass
gallium arsenide
III-V semiconductors
SCF calculations
semiconductor quantum wires
spectral line shift
EXCHANGE INTERACTION
ENERGY
STATES
ABSORPTION
NANOWIRES
ELECTRONS
SUBBANDS
WELLS
FIELD
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
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  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:69/0
  |  
提交时间:2010/03/08
aluminium compounds
gallium arsenide
III-V semiconductors
internal stresses
reflectivity
semiconductor heterojunctions
semiconductor quantum wells
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
收藏
  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:231/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers
期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866
Sun, J
;
Zhou, DY
;
Li, RY
;
Zhao, C
;
Ye, XL
;
Xu, B
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:64/5
  |  
提交时间:2010/03/08
III-V semiconductors
quantum dots
scanning electron microscopy
selective etching
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