CORC

在结果中检索

CORC

浏览/检索结果: 共95条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文
ieee transactions on electron devices, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459
Xiangting Kong; Xuliang Zhou; Shiyan Li; Hudong Chang; Honggang Liu; Jing Wang; Renrong Liang; Wei Wang; Jiaoqing Pan
收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23
Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文
journal of crystal growth, 2015, 卷号: 425, 页码: 381-384
Chengyan Wang; Yang Zhang; Min Guan; Lijie Cui; Kai Ding; Bintian Zhang; Zhang Lin; Feng Huang; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文
chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504
Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang
收藏  |  浏览/下载：28/0  |  提交时间：2016/03/29
Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文
journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117
Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25
Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
ieee electron device letters, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F
收藏  |  浏览/下载：19/0  |  提交时间：2015/04/02
Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文
applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang
收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2014/03/17
Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
thin solid films, 2013, 卷号: 534, 页码: 655–658
Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang
收藏  |  浏览/下载：17/0  |  提交时间：2014/05/08
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Xiaojia, Wan; Xiaoliang, Wang; Hongling, Xiao; Chun, Feng; Lijuan, Jiang; Shenqi, Qu; Zhanguo, Wang; Xun, Hou
收藏  |  浏览/下载：17/0  |  提交时间：2014/05/16

©版权所有 ©2017 CSpace - Powered by CSpace