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Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD; Jiang C; Zhu QS; Sakaki H
收藏  |  浏览/下载:61/9  |  提交时间:2011/07/05
GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载:65/4  |  提交时间:2011/07/05
Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong); Yin H (Yin Hong); Zhu QS (Zhu Qinsheng); Sakaki H (Sakaki Hiroyuki); Jiang C (Jiang Chao)
收藏  |  浏览/下载:204/41  |  提交时间:2010/10/11
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载:69/8  |  提交时间:2011/07/05
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载:237/104  |  提交时间:2010/03/08
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Zhang PF (Zhang, P. F.); Liu XL (Liu, X. L.); Wei HY (Wei, H. Y.); Fan HB (Fan, H. B.); Liang ZM (Liang, Z. M.); Jin P (Jin, P.); Yang SY (Yang, S. Y.); Jiao CM (Jiao, C. M.); Zhu QS (Zhu, Q. S.); Wang ZG (Wang, Z. G.)
收藏  |  浏览/下载:21/0  |  提交时间:2010/03/29
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:32/0  |  提交时间:2010/04/11
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG
收藏  |  浏览/下载:65/0  |  提交时间:2010/04/11
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang Y
收藏  |  浏览/下载:48/0  |  提交时间:2010/04/11
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载:89/0  |  提交时间:2010/03/17
4H-SiC  


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