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Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides 期刊论文
acs appl mater interfaces, 2016, 卷号: 8, 期号: 24, 页码: 15574-15581
Yongtao Li; Yan Wang; Le Huang; Xiaoting Wang; Xingyun Li; Hui-Xiong Deng; Zhongming Wei; Jingbo Li
收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文
chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301
Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun
收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507
Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires 期刊论文
RSC Advances, 2013, 期号: 43, 页码: 19834-19839
Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
收藏  |  浏览/下载：30/0  |  提交时间：2014/02/12
Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo
收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 434
Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：15/0  |  提交时间：2013/04/02
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/27
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：14/0  |  提交时间：2013/04/02

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