Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors | |
Lv YJ (Lv, Yuanjie) ; Lin ZJ (Lin, Zhaojun) ; Meng LG (Meng, Lingguo) ; Luan CB (Luan, Chongbiao) ; Cao ZF (Cao, Zhifang) ; Yu YX (Yu, Yingxia) ; Feng ZH (Feng, Zhihong) ; Wang ZG (Wang, Zhanguo) | |
刊名 | nanoscale research letters |
2012 | |
卷号 | 7页码:434 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-04-02 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/23849] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Lv YJ ,Lin ZJ ,Meng LG ,et al. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. nanoscale research letters,2012,7:434. |
APA | Lv YJ .,Lin ZJ .,Meng LG .,Luan CB .,Cao ZF .,...&Wang ZG .(2012).Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.nanoscale research letters,7,434. |
MLA | Lv YJ ,et al."Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors".nanoscale research letters 7(2012):434. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论