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科研机构
半导体研究所 [10]
内容类型
期刊论文 [9]
会议论文 [1]
发表日期
2007 [2]
2004 [2]
2002 [1]
2000 [2]
1999 [2]
1991 [1]
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半导体材料 [10]
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Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiaoliang)
;
Wang JX (Wang Junxi)
;
Hu GX (Hu Guoxin)
;
Guo LC (Guo Lunchun)
;
Li JP (Li Jianping)
;
Li JM (Li Jinmin)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/29
characterization
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
期刊论文
chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiao-Liang)
;
Wang JX (Wang Jun-Xi)
;
Hu GX (Hu Guo-Xin)
;
Guo LC (Guo Lun-Chun)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
GaN
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
期刊论文
micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480
Luo, XH
;
Wang, RM
;
Zhang, XP
;
Zhang, HZ
;
Yu, DP
;
Luo, MC
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  |  
浏览/下载:145/32
  |  
提交时间:2010/03/09
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE
期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235
Luo MC
;
Wang XL
;
Li JM
;
Liu HX
;
Wang L
;
Sun DZ
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/08/12
atomic force microscopy
Raman
transmission electron microscopy
molecular beam epitaxy
aluminium nitride
ELECTRON-AFFINITY
GAN
SI(111)
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:50/0
  |  
提交时间:2010/08/12
self-organized quantum dots
InAs/In0.53Ga0.47As multilayer
InP substrate
MBE
MOLECULAR-BEAM-EPITAXY
INAS ISLANDS
GROWTH
MATRIX
GAAS
Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition
期刊论文
thin solid films, 2000, 卷号: 360, 期号: 1-2, 页码: 205-212
Zhu M
;
Guo X
;
Chen G
;
Han H
;
He M
;
Sun K
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  |  
浏览/下载:101/0
  |  
提交时间:2010/08/12
microstructures
microcrystalline silicon
hot wire chemical vapor deposition
AMORPHOUS-SILICON
HYDROGEN
PLASMA
SPECTRA
GROWTH
SILANE
TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy
期刊论文
defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65
作者:
Han PD
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/08/12
HREM
large-angle stereo-projection
misfit dislocations
stacking faults
TEM
LAYER
SUPERLATTICES
ELECTRON-MICROSCOPY
Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 375-381
Zhuang QD
;
Li JM
;
Zeng YP
;
Pan L
;
Li HX
;
Kong MY
;
Lin LY
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/08/12
InGaAs/GaAs
quantum dots
superlattice
structure
TEM
X-ray
ISLANDS
GROWTH
GAAS
MULTILAYERS
SURFACES
X-RAY-DIFFRACTION
THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS
期刊论文
journal of the electrochemical society, 1991, 卷号: 138, 期号: 1, 页码: 214-219
WANG YY
;
JIANG T
;
SHEN T
;
SUN TJ
;
ZHANG AZ
;
FENG SQ
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
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