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科研机构
半导体研究所 [12]
内容类型
期刊论文 [9]
会议论文 [3]
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2010 [2]
2009 [1]
2008 [1]
2007 [1]
2006 [1]
2002 [1]
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半导体材料 [12]
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The Fabrication of Eight-Channel DFB Laser Array Using Sampled Gratings
期刊论文
ieee photonics technology letters, 2010, 卷号: 22, 期号: 5, 页码: 353-355
Zhu HL (Zhu Hongliang)
;
Xu XD (Xu Xiaodong)
;
Wang H (Wang Huan)
;
Kong DH (Kong Duanhua)
;
Liang S (Liang Song)
;
Zhao LJ (Zhao Lingjuan)
;
Wang W (Wang Wei)
收藏
  |  
浏览/下载:253/56
  |  
提交时间:2010/04/22
Distributed-feedback (DFB) lasers
sampled gratings
semiconductor laser arrays
wavelength-division multiplexing (WDM)
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
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  |  
浏览/下载:215/46
  |  
提交时间:2010/10/11
INAS/ALSB QUANTUM-WELLS
LOW-POWER APPLICATIONS
HEMTS
MODULATION
HETEROSTRUCTURES
TECHNOLOGY
CHANNEL
VOLTAGE
MASS
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:
Zhang ML
;
Hou QF
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  |  
浏览/下载:132/30
  |  
提交时间:2010/03/08
AlGaN/AlN/GaN
HEMT
MOCVD
SiC substrate
Power device
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang)
;
Hu GX (Hu Guoxin)
;
Ma ZY (Ma Zhiyong)
;
Ran JX (Ran Junxue)
;
Wang CM (Wang Cuimei)
;
Mao HL (Mao Hongling)
;
Tang H (Tang Han)
;
Li HP (Li Hanping)
;
Wang JX (Wang Junxi)
;
Zeng YP (Zeng Yiping)
;
Jinmin LM (Li Jinmin)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/03/29
2DEG
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
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  |  
浏览/下载:66/0
  |  
提交时间:2010/04/11
HEMT
heterojunction
two dimentional electron gas
self-consistent calculation
FIELD-EFFECT TRANSISTOR
TRANSPORT-PROPERTIES
QUANTUM-WELLS
HEMTS
FREQUENCY
DENSITY
Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors
期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 4, 页码: 516-522
Wei X
;
Wang GH
;
Zhang GZ
;
Zhu XP
;
Ma XY
;
Chen LH
收藏
  |  
浏览/下载:85/2
  |  
提交时间:2010/08/12
high resolution X-ray diffraction
precursor
metalorganic chemical vapor depositions
gallium compounds
LASER-DIODES
SOLAR-CELLS
BAND-GAP
GAINNAS
DIMETHYLHYDRAZINE
GROWTH
PYROLYSIS
EPITAXY
Self-assembled quantum dots, wires and quantum-dot lasers
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1132-1139
作者:
Xu B
收藏
  |  
浏览/下载:144/9
  |  
提交时间:2010/08/12
low dimensional structures
strain
molecular beam epitaxy
quantum dots
semiconducting III-V materials
laser diodes
WELL LASERS
High-quality metamorphic HEMT grown on GaAs substrates by MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
high electron mobility transistors
DENSITY
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD
;
Niu ZC
;
Feng SL
;
Miao ZH
收藏
  |  
浏览/下载:95/3
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
optical microscopy
molecular beam epitaxy
nanomaterials
semiconducting III-V materials
laser diodes
TEMPERATURE-DEPENDENCE
M PHOTOLUMINESCENCE
INGAAS OVERGROWTH
GAAS
DOTS
EMISSION
ENERGY
LASER
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