CORC

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CORC

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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Columnar structures and stress relaxation in thick GaN films grown on sapphire by HVPE 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 3, 页码: 822-824
Wei TB (Wei Tong-Bo); Ma P (Ma Ping); Duan RF (Duan Rui-Fei); Wang JX (Wang Jun-Xi); Li JM (Li Jin-Min); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer 期刊论文
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:  Duan RF;  Wei TB
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29
GaN  
Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2096-2099
Han, XX; Wu, JJ; Li, JM; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：44/17  |  提交时间：2010/03/17
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15
Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2002, 卷号: 17, 期号: 9, 页码: 957-960
Lu LW; Yan H; Yang CL; Xie MH; Wang ZG; Wang J; Ge WK
收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH
收藏  |  浏览/下载：134/8  |  提交时间：2010/08/12

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