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CORC

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Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE 期刊论文
chinese physics b, 2016, 卷号: 25, 期号: 4, 页码: 048105
Dong-Yue Han; Hui-Jie Li; Gui-Juan Zhao; Hong-Yuan Wei; Shao-Yan Yang; Lian-Shan Wang
收藏  |  浏览/下载：17/0  |  提交时间：2017/03/10
Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer 期刊论文
chinese physics b, 2015, 卷号: 24, 期号: 2, 页码: 26802-26806
Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy 期刊论文
nanoscale research letters, 2014, 卷号: 9, 页码: 470
Sang, L; Zhu, QS; Yang, SY; Liu, GP; Li, HJ; Wei, HY; Jiao, CM; Liu, SM; Wang, ZG; Zhou, XW; Mao, W; Hao, Y; Shen, B
收藏  |  浏览/下载：24/0  |  提交时间：2015/03/25
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 026801
Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：17/0  |  提交时间：2015/03/20
Determination of polar C-plane and nonpolar A-plane AlN-GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
physica status solidi (b), 2013, 卷号: 1, 期号: 4
Huijie Li, Xianglin Liu, Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu, Wei Mao, Yue Hao, Qinsheng Zhu, Zhanguo Wang
收藏  |  浏览/下载：23/0  |  提交时间：2014/03/17
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces. 期刊论文
nanoscale research letters, 2013, 卷号: 8, 页码: 298
Shujie Wu, Yonghai Chen, Jinling Yu, Hansong Gao, Chongyun Jiang, Jianliang Huang, Yanhua Zhang, Yang Wei, Wenquan Ma
收藏  |  浏览/下载：19/0  |  提交时间：2014/03/17
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：121/2  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：112/4  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：59/3  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05

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