Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE

	Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE
	Dong-Yue Han ; Hui-Jie Li ; Gui-Juan Zhao ; Hong-Yuan Wei ; Shao-Yan Yang ; Lian-Shan Wang
刊名	chinese physics b
	2016
卷号	25 期号:4 页码:048105
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27758]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Dong-Yue Han,Hui-Jie Li,Gui-Juan Zhao,et al. Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE[J]. chinese physics b,2016,25(4):048105.
APA	Dong-Yue Han,Hui-Jie Li,Gui-Juan Zhao,Hong-Yuan Wei,Shao-Yan Yang,&Lian-Shan Wang.(2016).Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE.chinese physics b,25(4),048105.
MLA	Dong-Yue Han,et al."Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE".chinese physics b 25.4(2016):048105.