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科研机构
半导体研究所 [7]
内容类型
期刊论文 [4]
会议论文 [3]
发表日期
2011 [1]
2006 [1]
2003 [1]
2001 [4]
学科主题
半导体材料 [7]
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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:
Xu B
;
Zhou GY
;
Ye XL
;
Zhang HY
收藏
  |  
浏览/下载:55/5
  |  
提交时间:2011/07/05
SELF-ORGANIZED ISLANDS
MOLECULAR-BEAM-EPITAXY
OPTICAL-PROPERTIES
SURFACES
EMISSION
DENSITY
SIZE
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/04/11
HEMT
heterojunction
two dimentional electron gas
self-consistent calculation
FIELD-EFFECT TRANSISTOR
TRANSPORT-PROPERTIES
QUANTUM-WELLS
HEMTS
FREQUENCY
DENSITY
Controllable growth of semiconductor nanometer structures
会议论文
conference on low dimensional structures and devices (ldsd), fortaleza, brazil, dec 08-13, 2002
Wang ZG
;
Wu J
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
INAS QUANTUM DOTS
SELF-ORGANIZATION
MONOLAYER COVERAGE
DENSITY
GAAS
ISLANDS
INP(001)
EPITAXY
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Xu B
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
low dimensional structures
molecular beam epitaxy
nanomaterials
INAS ISLANDS
GAAS
GROWTH
GAAS(100)
THICKNESS
DENSITY
High-quality metamorphic HEMT grown on GaAs substrates by MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
high electron mobility transistors
DENSITY
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
作者:
Xu B
收藏
  |  
浏览/下载:126/19
  |  
提交时间:2010/08/12
low dimensional structures
molecular beam epitaxy
nanomaterials
INAS ISLANDS
GAAS
GROWTH
GAAS(100)
THICKNESS
DENSITY
High-quality metamorphic HEMT grown on GaAs substrates by MBE
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 210-213
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:118/19
  |  
提交时间:2010/08/12
molecular beam epitaxy
high electron mobility transistors
DENSITY
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