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科研机构
半导体研究所 [11]
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期刊论文 [10]
会议论文 [1]
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2011 [1]
2010 [3]
2009 [1]
2008 [1]
2007 [1]
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半导体材料 [11]
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学科主题:半导体材料
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Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/12/28
NARROW-GAP SEMICONDUCTOR
INVERSION-ASYMMETRY
QUANTUM DOTS
BAND
STATES
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Jia CH (Jia C. H.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:21/0
  |  
提交时间:2010/12/12
DEPENDENCE
SPECTRA
Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers
期刊论文
japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-Fei)
;
Gu YX (Gu Yong-Xian)
;
Wang ZG (Wang Zhan-Guo)
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  |  
浏览/下载:91/11
  |  
提交时间:2010/08/17
DEPENDENCE
WELL
Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102
Xu PF (Xu Peng-Fei)
;
Yang T (Yang Tao)
;
Ji HM (Ji Hai-Ming)
;
Cao YL (Cao Yu-Lian)
;
Gu
;
YX (Gu Yong-Xian)
;
Liu Y (Liu Yu)
;
Ma WQ (Ma Wen-Quan)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:208/54
  |  
提交时间:2010/04/13
energy states
optical modulation
quantum dot lasers
THRESHOLD CURRENT
WELL
GAIN
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:313/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:234/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Thermodynamic properties of Cu-3(CO3)(2)(OH)(2) and the spin-1/2 distorted diamond Heisenberg chain
期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113907
Li, YC
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  |  
浏览/下载:49/2
  |  
提交时间:2010/03/08
MATRIX RENORMALIZATION-GROUP
GROUND-STATE
AZURITE
FERRIMAGNET
CU3(OH)2(CO3)2
TEMPERATURE
Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density
期刊论文
journal of applied physics, 2005, 卷号: 98, 期号: 8, 页码: art.no.084305
作者:
Duan RF
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  |  
浏览/下载:90/30
  |  
提交时间:2010/03/17
LOCALIZED EXCITONS
Magnetic properties of silicon doped with gadolinium
期刊论文
applied physics a-materials science & processing, 2003, 卷号: 77, 期号: 3-4, 页码: 599-602
Zhou JP
;
Chen NF
;
Song SL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Lin LY
收藏
  |  
浏览/下载:322/10
  |  
提交时间:2010/08/12
METAL-INSULATOR-TRANSITION
BEAM EPITAXY TECHNIQUE
SEMICONDUCTING SILICIDES
INDUCED FERROMAGNETISM
FILMS
MAGNETORESISTANCE
TEMPERATURE
ALLOYS
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth
期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:
Zhao DG
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  |  
浏览/下载:69/0
  |  
提交时间:2010/08/12
GaN
epitaxial lateral overgrowth
crystallographic tilt
double crystal X-ray diffraction
FILMS
DEFECTS
GAAS
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