Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density

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	Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density
	Duan RF
刊名	journal of applied physics
	2005
卷号	98 期号:8 页码:art.no.084305
关键词	LOCALIZED EXCITONS
ISSN号	0021-8979
通讯作者	xu, sj, univ hong kong, dept phys, cas, joint lab new mat, pokfulam rd, hong kong, hong kong, peoples r china. 电子邮箱地址: sjxu@hkucc.hku.hk
中文摘要	variable-temperature photoluminescence (pl) spectra of si-doped self-assembled ingaas quantum dots (qds) with and without gaas cap layers were measured. narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface qds at low temperature, respectively. as large as 210 mev redshift of the pl peak of the surface qds with respect to that of the buried qds is mainly due to the change of the strain around qds before and after growth of the gaas cap layer. using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of pl peaks and integrated intensities of the two samples. the results reveal that there exists a large difference in microscopic mechanisms of pl thermal quenching between two samples. (c) 2005 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8448]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Duan RF. Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density[J]. journal of applied physics,2005,98(8):art.no.084305.
APA	Duan RF.(2005).Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density.journal of applied physics,98(8),art.no.084305.
MLA	Duan RF."Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density".journal of applied physics 98.8(2005):art.no.084305.