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Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:  Song HP;  Zhang B
收藏  |  浏览/下载：32/0  |  提交时间：2010/04/04
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏  |  浏览/下载：83/25  |  提交时间：2010/03/08
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:  Ye XL;  Xu B;  Jin P
收藏  |  浏览/下载：90/0  |  提交时间：2010/04/11
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载：94/3  |  提交时间：2010/08/12
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
Lu LW; Ge WK; Sou IK; Wang J
收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29
ZNSTE  
Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 193-197
作者:  Xu B
收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12
Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE 期刊论文
journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 38-42
Wang HM; Fan TW; Wu J; Zeng YP; Dong JR; Kong MY
收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12
Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy 期刊论文
vacuum, 1998, 卷号: 49, 期号: 2, 页码: 133-137
Wu Z; Huang D; Yang X; Wang J; Qin F; Zhang J; Yang Z
收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12
Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD 期刊论文
journal of crystal growth, 1996, 卷号: 169, 期号: 4, 页码: 643-648
Lu LW; Feng SL; Xu JY; Yang H; Wang ZG; Wang J; Wang Y; Ge WK
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17

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