Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD

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	Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD
	Lu LW ; Feng SL ; Xu JY ; Yang H ; Wang ZG ; Wang J ; Wang Y ; Ge WK
刊名	journal of crystal growth
	1996
卷号	169 期号:4 页码:643-648
关键词	ALXGA1-XAS EPITAXY TRAPS
ISSN号	0022-0248
通讯作者	lu lw hong kong univ sci & technoldept physkowloonhong kong.
中文摘要	the deep centers in algaas/gaas graded index-separate confinement heterostructure single quantum well (grin-schsqw) laser structures grown by mbe and mocvd have been investigated using deep level transient spectroscopy (dlts) technique, the majority and minority carrier dlts spectra show that the deep (hole and electron) traps (hi and e3), having large capture cross sections and concentrations, are observed in the graded n-alxga1-xas layer of laser structures in addition to the well-known dx centers. for laser structures grown by mbe, the deep hole trap h1 and the deep electron trap e3 may be spatially localized in the interface regions of discontinuous variation al mole fraction of the n-alxga1-xas layer with x = 0.20-0.43. for laser structures grown by mocvd, the deep electron trap e3 may be spatially localized in the n-alxga1-xas layer with x = 0.18-0.30, and the dx center may be spatially localized in the interface regions of discontinuous variation al mole fraction of the alxga1-xas layer with x = 0.22-0.30.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15311]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Feng SL,Xu JY,et al. Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD[J]. journal of crystal growth,1996,169(4):643-648.
APA	Lu LW.,Feng SL.,Xu JY.,Yang H.,Wang ZG.,...&Ge WK.(1996).Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD.journal of crystal growth,169(4),643-648.
MLA	Lu LW,et al."Deep centers in AlGaAs/GaAs GRIN-SCH SQW laser structures grown by MBE and MOCVD".journal of crystal growth 169.4(1996):643-648.