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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者: Xu B; Zhou GY; Ye XL; Zhang HY 收藏  |  浏览/下载:54/5  |  提交时间:2011/07/05
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| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者: Xu B; Jin P; Ye XL 收藏  |  浏览/下载:63/1  |  提交时间:2011/07/05
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| Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者: Song HP 收藏  |  浏览/下载:69/3  |  提交时间:2011/07/05
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| Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210 作者: Jin P; Xu B 收藏  |  浏览/下载:36/0  |  提交时间:2010/04/11
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| Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508 Zuo R (Zuo Ran); Zhang H (Zhang Hong); Liu XL (Liu Xiang-lin) 收藏  |  浏览/下载:58/0  |  提交时间:2010/04/11
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| Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate 期刊论文 solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 630-633 作者: Xu B 收藏  |  浏览/下载:52/0  |  提交时间:2010/04/11
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| Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells 期刊论文 chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 548-551 Bian LF; Jiang D; Liang XG; Lu SL 收藏  |  浏览/下载:41/18  |  提交时间:2010/03/09
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| The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs 期刊论文 journal of crystal growth, 2002, 卷号: 243, 期号: 2, 页码: 261-266 作者: Jiang DS 收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
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| A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文 journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29 作者: Li CM; Xu B; Jin P; Ye XL 收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
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| A novel line-order of InAs quantum dots on GaAs 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73 作者: Li CM; Xu B; Jin P 收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12
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