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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：102/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文 10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000 Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 GaN  annealing treatment  In-doping  MOVPE  photoluminescence  CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  BUFFER LAYER  FILMS  SAPPHIRE   Growth and characterization of GaN on LiGaO2 会议论文 9th international conference on metalorganic vpour phase epitaxy (icmovpe-ix), la jolla, california, may 31-jun 04, 1998 作者:  Han PD 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 DIODES   Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载：23/0  |  提交时间：2010/10/29 METASTABILITY  ANTISITE   Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 作者:  Han PD 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 DIODES