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科研机构
半导体研究所 [11]
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会议论文 [11]
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2006 [3]
2004 [1]
2003 [2]
2001 [2]
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1998 [1]
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半导体材料 [11]
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Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
会议论文
21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005
Liao, XB (Liao, Xianbo)
;
Du, WH (Du, Wenhui)
;
Yang, XS (Yang, Xiesen)
;
Povolny, H (Povolny, Henry)
;
Xiang, XB (Xiang, Xianbi)
;
Deng, XM (Deng, Xunming)
;
Sun, K (Sun, Kai)
收藏
  |  
浏览/下载:267/77
  |  
提交时间:2010/03/29
amorphous semiconductors
High-power operation of quantum cascade lasers endured prolonged air-oxidation
会议论文
joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics, shanghai, peoples r china, sep 18-22, 2006
Shao, Y (Shao, Ye)
;
Liu, FQ (Liu, Feng-Qi)
;
Li, L (Li, Lu)
;
Lu, XZ (Lu, Xiu-Zhen)
;
Liu, JQ (Liu, Jun-Qi)
;
Wang, ZG (Wang, Zhan-Guo)
收藏
  |  
浏览/下载:154/54
  |  
提交时间:2010/03/29
High quality microcrystalline Si films by hydrogen dilution profile
会议论文
12th international conference on thin films, bratislava, slovakia, sep 15-20, 2002
Gu, JH (Gu, Jinhua)
;
Zhu, MF (Zhu, Meifang)
;
Wang, LJ (Wang, Liujiu)
;
Liu, FZ (Liu, Fengzhen)
;
Zhou, BQ (Zhou, Bingqing)
;
Ding, K (Ding, Kun)
;
Li, GH (Li, Guohua)
收藏
  |  
浏览/下载:189/19
  |  
提交时间:2010/03/29
microcrystalline Si thin film
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Han PD
收藏
  |  
浏览/下载:83/1
  |  
提交时间:2010/10/29
metalorganic chemical vapor deposition
semiconducting III-V materials
DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES
CARRIER CONFINEMENT
EFFECT TRANSISTORS
PHOTOLUMINESCENCE
MOBILITY
HETEROJUNCTION
INTERFACE
HFETS
Growth and photoluminescence of InAlGaN films
会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:
Li DB
收藏
  |  
浏览/下载:13/2
  |  
提交时间:2010/10/29
MULTIPLE-QUANTUM WELLS
QUATERNARY ALLOYS
OPTICAL-PROPERTIES
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline
会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
Zhang SB
;
Liao XB
;
Xu YY
;
Hu ZH
;
Zeng XB
;
Diao HW
;
Luo MC
;
Kong G
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/10/29
POLYMORPHOUS SILICON
LIGHT-SCATTERING
THIN-FILMS
SI
MICROCRYSTALLINITY
ABSORPTION
STATES
High-quality GaN grown by gas-source MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Wang JX
;
Sun DZ
;
Wang XL
;
Li JM
;
Zeng YP
;
Hou X
;
Lin LY
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
characterization
molecular beam epitaxy
gallium compounds
nitrides
piezoelectric materials
semiconducting gallium compounds
MOLECULAR-BEAM EPITAXY
HETEROSTRUCTURES
SAPPHIRE
DIODES
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Cao X
;
Zeng YP
;
Cui LJ
;
Kong MY
;
Pan LA
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
MOBILITY
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
metalorganic chemical vapor deposition
cubic GaN
hexagonal phase content
4-circle X-ray double crystal diffraction
MOLECULAR-BEAM EPITAXY
GALLIUM NITRIDE
THIN-FILMS
SILICON
GAAS
GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy
会议论文
conference on optoelectronic and microelectronic materials and devices, bundoora, australia, dec 06-08, 2000
Pan Z
;
Li LH
;
Wang XY
;
Lin YW
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
会议主办方: LA TROBE UNIV, DEPTS ELECTR ENGN & PHYS
OPERATION
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