High quality microcrystalline Si films by hydrogen dilution profile

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	High quality microcrystalline Si films by hydrogen dilution profile
	Gu, JH (Gu, Jinhua) ; Zhu, MF (Zhu, Meifang) ; Wang, LJ (Wang, Liujiu) ; Liu, FZ (Liu, Fengzhen) ; Zhou, BQ (Zhou, Bingqing) ; Ding, K (Ding, Kun) ; Li, GH (Li, Guohua)
	2006
会议名称	12th international conference on thin films
会议日期	sep 15-20, 2002
会议地点	bratislava, slovakia
关键词	microcrystalline Si thin film
页码	515 (2): 452-455
通讯作者	zhu, mf, chinese acad sci, grad sch, coll phys sci, pob 4588, beijing 100049, peoples r china. 电子邮箱地址: mfzhu@gucas.ac.cn
中文摘要	novel hydrogen dilution profiling (hdp) technique was developed to improve the uniformity in the growth direction of mu c-si:h thin films prepared by hot wire chemical vapor deposition (hwcvd). it was found that the high h dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. a proper design of hydrogen dilution profiling improves the uniformity of crystalline content, x-c, in the growth direction and restrains the formation of micro-voids as well. as a result the compactness of mu c-si:h films with a high crystalline content is enhanced and the stability of mu c-si:h thin film against the oxygen diffusion is much improved. meanwhile the hdp mu c-si:h films exhibit the low defect states. the high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-si:h films. (c) 2006 published by elsevier b.v.
英文摘要	novel hydrogen dilution profiling (hdp) technique was developed to improve the uniformity in the growth direction of mu c-si:h thin films prepared by hot wire chemical vapor deposition (hwcvd). it was found that the high h dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. a proper design of hydrogen dilution profiling improves the uniformity of crystalline content, x-c, in the growth direction and restrains the formation of micro-voids as well. as a result the compactness of mu c-si:h films with a high crystalline content is enhanced and the stability of mu c-si:h thin film against the oxygen diffusion is much improved. meanwhile the hdp mu c-si:h films exhibit the low defect states. the high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-si:h films. (c) 2006 published by elsevier b.v.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; chinese acad sci, grad sch, coll phys sci, beijing 100049, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	其他
会议录	thin solid films
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0040-6090
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9980]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gu, JH ,Zhu, MF ,Wang, LJ ,et al. High quality microcrystalline Si films by hydrogen dilution profile[C]. 见:12th international conference on thin films. bratislava, slovakia. sep 15-20, 2002.