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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on the band-gap of InN grown on siticon substrates 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |  浏览/下载：101/15  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  WURTZITE INN  NITRIDE  ABSORPTION  ALLOYS  FILMS   Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Kang JY; Shen YW; Wang ZG 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 defects  GaN  photoluminescence  electronic structures  YELLOW LUMINESCENCE  EPITAXIAL-FILMS  MG   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility   Influence of open-tube Ga diffusion on the characteristics for thyristor 会议论文 symposium on power semiconductor materials and devices, boston, ma, dec 01-04, 1997 Wen RM; Pei SH 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29